Amorphous W40Re40B20 diffusion barriers for <Si>/Al and <Si>/Cu metallizations

E. Kolawa, X. Sun, J. S. Reid, J. S. Chen, M. A. Nicolet, R. Ruiz

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

The performance of W40Re40B20 metallic amorphous thin film alloys as diffusion barriers between monocrystalline silicon substrates (<Si>) and aluminum or copper overlayers is reported. The films are deposited using d.c. and r.f. magnetron co-sputtering. Their crystallization temperature and resistivity are about 900°C and 200 μohmscm, respectively. The <Si>/W40Re40B20/Al and <Si>/W40Re40B20/Cu metallizations were vacuum-annealed at different temperatures for 30 min and characterized by 4He backscattering spectrometry, X-ray diffraction, scanning electron microscopy in combination with energy-dispersive analysis of X-rays, and electrical measurements on shallow junction diodes. The <Si>/W40Re40B20/Al structure was stable up to 500 °C and failed at 550 °C due to chemical reactions between the barrier and aluminum. A formation of cracks in the bilayer <Si>/W40Re40B20/Cu structure is responsible for its failure at 600 °C. The results demonstrate that it is fruitless to raise the crystallization temperature of an amorphous metallic film if its ability to react with the adjacent materials is not suppressed as well.

原文English
頁(從 - 到)301-305
頁數5
期刊Thin Solid Films
236
發行號1-2
DOIs
出版狀態Published - 1993 12月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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