@article{27902f10edb8418e97c7c47eb852aa1f,
title = "An (AlxGa1-x)2O3 metal-semiconductor-metal VUV photodetector",
abstract = "The authors report the conversion of AlGaN epitaxial layer into (Al xGa1-x)2O3 thin film by furnace oxidation at high temperature in oxygen containing ambient. A vacuum-ultraviolet (AlxGa1-x)2O3 photodetector (PD) was also fabricated. It was found that external quantum efficiency of the fabricated PD measured at 220 nm was 30%. It was found that the fabricated PD exhibits extremely large deep-UV-to-visible rejection ratio.",
author = "Weng, {W. Y.} and Hsueh, {T. J.} and Chang, {S. J.} and Hung, {S. C.} and Huang, {G. J.} and Hsueh, {H. T.} and Huang, {Z. D.} and Chiu, {C. J.}",
note = "Funding Information: Manuscript received September 02, 2010; revised December 08, 2010; accepted December 31, 2010. Date of publication January 10, 2011; date of current version July 27, 2011. This work was granted in part by the Center for Frontier Materials and Micro/Nano Science and Technology and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU, under projects from the Ministry of Education, TAIWAN. The authors also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan, for financially supporting this research under Contract 98-D0204-6 and the LED Lighting and Research Center, NCKU, for the assistance in related measurements. The associate editor coordinating the review of this paper and approving it for publication was Prof. Ralph Etienne-Cummings.",
year = "2011",
doi = "10.1109/JSEN.2011.2104947",
language = "English",
volume = "11",
pages = "1795--1799",
journal = "IEEE Sensors Journal",
issn = "1530-437X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",
}