An analytical compact PCM model accounting for partial crystallization

Yi Bo Liao, Yan Kai Chen, Meng Hsueh Chiang

研究成果: Conference contribution

21 引文 斯高帕斯(Scopus)

摘要

This paper presents a simple yet predictive compact model for phase change memory (PCM). We successfully implement the model in a circuit simulator using Verilog-A. Due to the physical nature of the model, it can be used to predict the temperature and crystalline fraction in the cell, simply via SPICE simulation. This paper also demonstrates the use of the model in static resistance calculation, i.e. the Set and Reset statuses in R-I characteristics. More importantly, the crystal status transitions such as partial crystalline and amorphous statuses, resulting in uncertain resistance, are accounted for. The model can facilitate the PCM technology development not only in the device level, but also in the circuit level.

原文English
主出版物標題IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
頁面625-628
頁數4
DOIs
出版狀態Published - 2007 12月 1
事件IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
持續時間: 2007 12月 202007 12月 22

出版系列

名字IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
國家/地區Taiwan
城市Tainan
期間07-12-2007-12-22

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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