An Analytical Gate-All-Around MOSFET Model for Circuit Simulation

Kuan Chou Lin, Wei Wen Ding, Meng Hsueh Chiang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A generic charge-based compact model for undoped (lightly doped) quadruple-gate (QG) and cylindrical-gate MOSFETs using Verilog-A is developed. This model is based on the exact solution of Poisson's equation with scale length. The fundamental DC and charging currents of QG MOSFETs are physically and analytically calculated. In addition, as the Verilog-A modeling is portable for different circuit simulators, the modeling scheme provides a useful tool for circuit designers.

原文English
文章編號320320
期刊Advances in Materials Science and Engineering
2015
DOIs
出版狀態Published - 2015

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

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