An analytical model and measurement on the InAlAs/InGaAs high-electron-mobility transistor with oxidized InAlAs gate

Jung Sheng Huang, Kuan Wei Lee, Fang Ming Lee, Yung Sheng Huang, Yeong-Her Wang

研究成果: Conference contribution

摘要

The analytical model and measurement of InAlAs/InGaAs metal-oxide- semiconductor high-electron-mobility transistor (MOS-HEMT) lattice-matched to InP substrate with a thin InAlAs native oxide layer are compared and achieved a good agreement, which show the validity of the proposed MOS-HEMT model.

原文English
主出版物標題IPRM'07
主出版物子標題IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings
頁面114-117
頁數4
DOIs
出版狀態Published - 2007 十月 2
事件IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Matsue, Japan
持續時間: 2007 五月 142007 五月 18

出版系列

名字Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(列印)1092-8669

Other

OtherIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
國家Japan
城市Matsue
期間07-05-1407-05-18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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