An analytical model for the heterostructure-emitter bipolar transistors

S. J. Wang, B. Y. Yang, Y. C. Luo

研究成果: Conference contribution

摘要

Heterojunction bipolar transistors (KBTs) have been the subject of much attention for high gain and high speed operation, and high fan-out capabifity. However, from the device operation point of view, an undesirable characteristic of HBTs in switching application has been the presence of large collector-emitter (c-e) offset voltage. The higher offset voltage increases the c-e saturation voltage, which results in unnecessary consumption in circuit applications. The higher tum-on voltage of the e-b heterojunction is attributed to the conduction band spike at the heterojunction interface. Different schemes for obtaining a graded bandgap base or a compositional grading in the emitter have been proposed to suppress the conduction band spike appearing at the e-b heterojunction. Unfortunately, recent work has suggested that grading techniques may not be completely effective in eliminating barriers to electron conduction at high current densityfq. Moreover, from the point view of manufacturability, the fkbrication of graded bandgap base or compositional grading e-b heterojunction HBTs is far more complicated than that for conventional BJTs.

原文English
主出版物標題SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation
發行者Institute of Electrical and Electronics Engineers Inc.
頁面107-108
頁數2
ISBN(電子)0780312252, 9780780312258
DOIs
出版狀態Published - 1993 1月 1
事件1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993 - Taipei, Taiwan
持續時間: 1993 3月 61993 3月 7

出版系列

名字SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation

Conference

Conference1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993
國家/地區Taiwan
城市Taipei
期間93-03-0693-03-07

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料
  • 建模與模擬

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