An analytical subthreshold current model for GaAs Mesfet's

An analytical GaAs MESFET model capable of describing the current in the subthreshold region was derived. The model is based on the drift-diffusion transport mechanism, together with the drain-induced barrier lowering (DIBL) effect, which is prevailing particularly in a short channel device. From this model the subthreshold currents for long channel as well as short channel and the subthreshold swings in two cases are developed. Good agreement between the calculated and experimental results can also be achieved. This model offers a basis for analysis and simulation of small-geometry GaAs MESFET behavior in the subthreshold region.