An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors

Guan Fu Chen, Hong Chih Chen, Ting Chang Chang, Shin Ping Huang, Hua Mao Chen, Po Yung Liao, Jian Jie Chen, Chuan Wei Kuo, Wei Chih Lai, Ann Kuo Chu, Sung Chun Lin, Cheng Yen Yeh, Chia Sen Chang, Cheng Ming Tsai, Ming Chang Yu, Shengdong Zhang

研究成果: Article

摘要

This paper clarifies the correct transmission mechanism, misattributed in the previous research, of a hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) device. Complete drain current-gate voltage (ID - VG) transfer characteristics including the forward and backward gate sweeps (gate voltage carried out in the OFF-state → to on-state and the ON-state → to OFF-state) are performed, and the physics models of an energy-band schematic are clearly explained. This paper reveals that the ID - VG curve stretch-out behavior of the subthreshold region is due to the leakage of the Poole-Frenkel region. At the Poole-Frenkel regions, electrons transfer to the drain terminal, and holes remain in the valance band of the a-Si:H bulk. The remaining holes represent the positive voltage and cause the electron barrier height lowering. This causes an increase in subthreshold current of the subthreshold region. Finally, three experiments are performed to prove the correctness of these models, and the a-Si TFTs device improvement methods will be proposed to enhance the stability and performance of product of the a-Si TFTs.

原文English
文章編號8689093
頁(從 - 到)2614-2619
頁數6
期刊IEEE Transactions on Electron Devices
66
發行號6
DOIs
出版狀態Published - 2019 六月

指紋

Thin film transistors
Amorphous silicon
Band structure
Electric potential
Electrons
Drain current
Schematic diagrams
Physics
Experiments

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Chen, G. F., Chen, H. C., Chang, T. C., Huang, S. P., Chen, H. M., Liao, P. Y., ... Zhang, S. (2019). An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors. IEEE Transactions on Electron Devices, 66(6), 2614-2619. [8689093]. https://doi.org/10.1109/TED.2019.2908859
Chen, Guan Fu ; Chen, Hong Chih ; Chang, Ting Chang ; Huang, Shin Ping ; Chen, Hua Mao ; Liao, Po Yung ; Chen, Jian Jie ; Kuo, Chuan Wei ; Lai, Wei Chih ; Chu, Ann Kuo ; Lin, Sung Chun ; Yeh, Cheng Yen ; Chang, Chia Sen ; Tsai, Cheng Ming ; Yu, Ming Chang ; Zhang, Shengdong. / An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors. 於: IEEE Transactions on Electron Devices. 2019 ; 卷 66, 編號 6. 頁 2614-2619.
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title = "An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors",
abstract = "This paper clarifies the correct transmission mechanism, misattributed in the previous research, of a hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) device. Complete drain current-gate voltage (ID - VG) transfer characteristics including the forward and backward gate sweeps (gate voltage carried out in the OFF-state → to on-state and the ON-state → to OFF-state) are performed, and the physics models of an energy-band schematic are clearly explained. This paper reveals that the ID - VG curve stretch-out behavior of the subthreshold region is due to the leakage of the Poole-Frenkel region. At the Poole-Frenkel regions, electrons transfer to the drain terminal, and holes remain in the valance band of the a-Si:H bulk. The remaining holes represent the positive voltage and cause the electron barrier height lowering. This causes an increase in subthreshold current of the subthreshold region. Finally, three experiments are performed to prove the correctness of these models, and the a-Si TFTs device improvement methods will be proposed to enhance the stability and performance of product of the a-Si TFTs.",
author = "Chen, {Guan Fu} and Chen, {Hong Chih} and Chang, {Ting Chang} and Huang, {Shin Ping} and Chen, {Hua Mao} and Liao, {Po Yung} and Chen, {Jian Jie} and Kuo, {Chuan Wei} and Lai, {Wei Chih} and Chu, {Ann Kuo} and Lin, {Sung Chun} and Yeh, {Cheng Yen} and Chang, {Chia Sen} and Tsai, {Cheng Ming} and Yu, {Ming Chang} and Shengdong Zhang",
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Chen, GF, Chen, HC, Chang, TC, Huang, SP, Chen, HM, Liao, PY, Chen, JJ, Kuo, CW, Lai, WC, Chu, AK, Lin, SC, Yeh, CY, Chang, CS, Tsai, CM, Yu, MC & Zhang, S 2019, 'An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors', IEEE Transactions on Electron Devices, 卷 66, 編號 6, 8689093, 頁 2614-2619. https://doi.org/10.1109/TED.2019.2908859

An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors. / Chen, Guan Fu; Chen, Hong Chih; Chang, Ting Chang; Huang, Shin Ping; Chen, Hua Mao; Liao, Po Yung; Chen, Jian Jie; Kuo, Chuan Wei; Lai, Wei Chih; Chu, Ann Kuo; Lin, Sung Chun; Yeh, Cheng Yen; Chang, Chia Sen; Tsai, Cheng Ming; Yu, Ming Chang; Zhang, Shengdong.

於: IEEE Transactions on Electron Devices, 卷 66, 編號 6, 8689093, 06.2019, p. 2614-2619.

研究成果: Article

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T1 - An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors

AU - Chen, Guan Fu

AU - Chen, Hong Chih

AU - Chang, Ting Chang

AU - Huang, Shin Ping

AU - Chen, Hua Mao

AU - Liao, Po Yung

AU - Chen, Jian Jie

AU - Kuo, Chuan Wei

AU - Lai, Wei Chih

AU - Chu, Ann Kuo

AU - Lin, Sung Chun

AU - Yeh, Cheng Yen

AU - Chang, Chia Sen

AU - Tsai, Cheng Ming

AU - Yu, Ming Chang

AU - Zhang, Shengdong

PY - 2019/6

Y1 - 2019/6

N2 - This paper clarifies the correct transmission mechanism, misattributed in the previous research, of a hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) device. Complete drain current-gate voltage (ID - VG) transfer characteristics including the forward and backward gate sweeps (gate voltage carried out in the OFF-state → to on-state and the ON-state → to OFF-state) are performed, and the physics models of an energy-band schematic are clearly explained. This paper reveals that the ID - VG curve stretch-out behavior of the subthreshold region is due to the leakage of the Poole-Frenkel region. At the Poole-Frenkel regions, electrons transfer to the drain terminal, and holes remain in the valance band of the a-Si:H bulk. The remaining holes represent the positive voltage and cause the electron barrier height lowering. This causes an increase in subthreshold current of the subthreshold region. Finally, three experiments are performed to prove the correctness of these models, and the a-Si TFTs device improvement methods will be proposed to enhance the stability and performance of product of the a-Si TFTs.

AB - This paper clarifies the correct transmission mechanism, misattributed in the previous research, of a hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) device. Complete drain current-gate voltage (ID - VG) transfer characteristics including the forward and backward gate sweeps (gate voltage carried out in the OFF-state → to on-state and the ON-state → to OFF-state) are performed, and the physics models of an energy-band schematic are clearly explained. This paper reveals that the ID - VG curve stretch-out behavior of the subthreshold region is due to the leakage of the Poole-Frenkel region. At the Poole-Frenkel regions, electrons transfer to the drain terminal, and holes remain in the valance band of the a-Si:H bulk. The remaining holes represent the positive voltage and cause the electron barrier height lowering. This causes an increase in subthreshold current of the subthreshold region. Finally, three experiments are performed to prove the correctness of these models, and the a-Si TFTs device improvement methods will be proposed to enhance the stability and performance of product of the a-Si TFTs.

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