@article{eb6d87da83b4467785f57eea658c566d,
title = "An FET with a Source Tunneling Barrier Showing Suppressed Short-Channel Effects for Low-Power Applications",
abstract = "A device design technique using tunneling barriers (TBs) for reducing the short-channel effects (SCEs) is proposed. By introducing TBs at the source and drain junctions of a Si FET, the threshold voltage (Vth) roll-off can be significantly suppressed. This is because the TBs weaken the electrical coupling between drain bias and transmission/current spectrum in energy. Specifically, as compared with a conventional FET, the Vth roll-off for channel length reduction from 20 to 5 nm is mitigated by more than 40% when a thin TB is embedded at the source junction. This paper further reveals that the TB at the source junction dominates the physical mechanism minimizing the SCEs of the TBFET, and thus the device performance can be improved appreciably by removing the TB at the drain side and by decreasing the TB height at the source side.",
author = "Hsieh, {Yu Feng} and Chen, {Si Hua} and Chen, {Nan Yow} and Lee, {Wen Jay} and Tsai, {Jyun Hwei} and Chen, {Chun Nan} and Chiang, {Meng Hsueh} and Lu, {Darsen D.} and Kao, {Kuo Hsing}",
note = "Funding Information: Manuscript received November 15, 2017; revised December 17, 2017; accepted January 6, 2018. Date of publication January 23, 2018; date of current version February 22, 2018. This work was supported by the Ministry of Science and Technology, Taiwan, under Grant 106-2221-E-006-220-MY2. The review of this paper was arranged by Editor Y. Momiyama. (Corresponding author: Kuo-Hsing Kao.) Y.-F. Hsieh, S.-H. Chen, M.-H. Chiang, and D. D. Lu are with the Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, and also with the Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (e-mail: olynick16@gmail.com). Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2018",
month = mar,
doi = "10.1109/TED.2018.2791467",
language = "English",
volume = "65",
pages = "855--859",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}