An Improved Heterostructure-Emitter Bipolar Transistor (HEBT)

Wen Chau Liu; Wen Shiung Lour

doi:10.1109/55.116922

An Improved Heterostructure-Emitter Bipolar Transistor (HEBT)

Wen Chau Liu, Wen Shiung Lour

研究成果: Article › 同行評審

50 引文斯高帕斯（Scopus）

摘要

An N-A10.5Ga0.5As/n-GaAs heterostructure-emitter bipolar transistor (HEBT), grown by MBE, has been fabricated with improved performance. The A10.5Ga0.5As layer with higher valence-band offset ΔEv offers better confinement of minority carriers (holes). A small offset voltage of about 80 mV and a high common-emitter current gain of 180 were measured for large-area devices. On the other hand, the adequate design of an n-GaAs emitter layer also plays an important role in device performance. The strongly knee-shaped characteristics and reachthrough effect were observed in those devices fabricated with a thin n-GaAs emitter layer.

原文	English
頁（從 - 到）	474-476
頁數	3
期刊	IEEE Electron Device Letters
卷	12
發行號	9
DOIs	https://doi.org/10.1109/55.116922
出版狀態	Published - 1991 9月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/55.116922

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引用此

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abstract = "An N-A10.5Ga0.5As/n-GaAs heterostructure-emitter bipolar transistor (HEBT), grown by MBE, has been fabricated with improved performance. The A10.5Ga0.5As layer with higher valence-band offset ΔEv offers better confinement of minority carriers (holes). A small offset voltage of about 80 mV and a high common-emitter current gain of 180 were measured for large-area devices. On the other hand, the adequate design of an n-GaAs emitter layer also plays an important role in device performance. The strongly knee-shaped characteristics and reachthrough effect were observed in those devices fabricated with a thin n-GaAs emitter layer.",

author = "Liu, {Wen Chau} and Lour, {Wen Shiung}",

note = "Funding Information: Manuscript received January 4, 1991; revised June 10, 1991. Part of this work was supported by the National Science Council of the Republic of China under Contract NSC80-0404-E006-14. The authors are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, Republic of China. IEEE Log Number 9102405.",

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An Improved Heterostructure-Emitter Bipolar Transistor (HEBT)

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