An InGaP/InGaAs/GaAs double channel pseudomorphic high election mobility transistor (DC-PHEMT)

H. M. Chuang, K. W. Lin, C. Y. Chen, J. Y. Chen, C. I. Kao, W. C. Liu

研究成果: Conference contribution

摘要

The device characteristics of a novel InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (PHEMT) are reported. The double InGaAs layers are used to increase the total channel thickness. Experimentally, a flat and wide transconductance and microwave operation regimes over 300 mA/mm are obtained. In addition, the compression of transconductance and frequency response are insignificant even operated at high forward gate-source voltage of +2.0V. Therefore, the studied device provides the promise for microwave circuit applications.

原文English
主出版物標題2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
編輯Michael Gal
發行者Institute of Electrical and Electronics Engineers Inc.
頁面319-322
頁數4
ISBN(電子)0780375718
DOIs
出版狀態Published - 2002
事件Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
持續時間: 2002 12月 112002 12月 13

出版系列

名字Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
2002-January

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
國家/地區Australia
城市Sydney
期間02-12-1102-12-13

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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