An integrated a-Si:H Gate driver circuit design for large-sized TFT- LCD applications

Chih-Lung Lin, Mao Hsun Cheng, Chia En Wu, Chun Da Tu

研究成果: Conference article同行評審

4 引文 斯高帕斯(Scopus)

摘要

A novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) integrated gate driver circuit with 33% ac-driving structure is presented. The proposed circuit diminishes the threshold voltage (VTH) shift by reducing the bias voltage of pull down TFTs and alternatively turning on the pull down TFTs with 33% duty ratio. The measurement result illustrated that the VTH shift of the TFTs in the proposed structure is improved by 49.93% in contrast to the realized 25% ac-driving structure, and the gate driver can stably operate over 240-h driving at high temperature (60 °C).

原文English
頁(從 - 到)1007-1009
頁數3
期刊Digest of Technical Papers - SID International Symposium
44
發行號1
DOIs
出版狀態Published - 2013 一月 1

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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