An integrated a-Si:H Gate driver circuit design for large-sized TFT- LCD applications

Chih Lung Lin; Mao Hsun Cheng; Chia En Wu; Chun Da Tu

doi:10.1002/j.2168-0159.2013.tb06392.x

An integrated a-Si:H Gate driver circuit design for large-sized TFT- LCD applications

Chih Lung Lin
, Mao Hsun Cheng
, Chia En Wu
, Chun Da Tu

電機工程學系

研究成果: Conference article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

A novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) integrated gate driver circuit with 33% ac-driving structure is presented. The proposed circuit diminishes the threshold voltage (V_TH) shift by reducing the bias voltage of pull down TFTs and alternatively turning on the pull down TFTs with 33% duty ratio. The measurement result illustrated that the V_TH shift of the TFTs in the proposed structure is improved by 49.93% in contrast to the realized 25% ac-driving structure, and the gate driver can stably operate over 240-h driving at high temperature (60 °C).

原文	English
頁（從 - 到）	1007-1009
頁數	3
期刊	Digest of Technical Papers - SID International Symposium
卷	44
發行號	1
DOIs	https://doi.org/10.1002/j.2168-0159.2013.tb06392.x
出版狀態	Published - 2013 6月

All Science Journal Classification (ASJC) codes

一般工程

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10.1002/j.2168-0159.2013.tb06392.x

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title = "An integrated a-Si:H Gate driver circuit design for large-sized TFT- LCD applications",

abstract = "A novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) integrated gate driver circuit with 33\% ac-driving structure is presented. The proposed circuit diminishes the threshold voltage (VTH) shift by reducing the bias voltage of pull down TFTs and alternatively turning on the pull down TFTs with 33\% duty ratio. The measurement result illustrated that the VTH shift of the TFTs in the proposed structure is improved by 49.93\% in contrast to the realized 25\% ac-driving structure, and the gate driver can stably operate over 240-h driving at high temperature (60 °C).",

author = "Lin, \{Chih Lung\} and Cheng, \{Mao Hsun\} and Wu, \{Chia En\} and Tu, \{Chun Da\}",

year = "2013",

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AU - Lin, Chih Lung

AU - Cheng, Mao Hsun

AU - Wu, Chia En

AU - Tu, Chun Da

PY - 2013/6

Y1 - 2013/6

N2 - A novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) integrated gate driver circuit with 33% ac-driving structure is presented. The proposed circuit diminishes the threshold voltage (VTH) shift by reducing the bias voltage of pull down TFTs and alternatively turning on the pull down TFTs with 33% duty ratio. The measurement result illustrated that the VTH shift of the TFTs in the proposed structure is improved by 49.93% in contrast to the realized 25% ac-driving structure, and the gate driver can stably operate over 240-h driving at high temperature (60 °C).

AB - A novel hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) integrated gate driver circuit with 33% ac-driving structure is presented. The proposed circuit diminishes the threshold voltage (VTH) shift by reducing the bias voltage of pull down TFTs and alternatively turning on the pull down TFTs with 33% duty ratio. The measurement result illustrated that the VTH shift of the TFTs in the proposed structure is improved by 49.93% in contrast to the realized 25% ac-driving structure, and the gate driver can stably operate over 240-h driving at high temperature (60 °C).

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EP - 1009

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

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An integrated a-Si:H Gate driver circuit design for large-sized TFT- LCD applications

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