An investigation of Love wave devices based on ZnO:Mg/LiNbO3 structure

Ren Chuan Chang, Sheng Yuan Chu, Po Wen Yeh, Cheng Shong Hong, Hsin Hsuan Huang, Yi Jen Huang

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Love wave devices are very promising for sensing applications because of high sensitivity. In this paper, ZnO thin films doped with 3 mol% Mg were deposited on the 64° YX-LiNbO3 substrates by RF magnetron sputtering technique. XRD, SEM, and AFM measurements investigated characteristics of the films. Under different condition such as layer thickness and substrate temperature, the phase velocity, sensitivity, temperature coefficient of frequency and phase shift of Love wave devices in a MZO/LiNbO3 structure are presented. The maximum sensitivity of MZO/LiNbO3 appears at unheated temperature and is higher than that of the SiO2/Quartz and SiO2/LiTaO3 structures reported.

原文English
頁(從 - 到)312-318
頁數7
期刊Sensors and Actuators, B: Chemical
132
發行號1
DOIs
出版狀態Published - 2008 五月 28

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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