An investigation on hot-carrier reliability and degradation index in lateral diffused metal-oxide-semiconductor field-effect transistors

Kuen Shiuan Tian, Jone F. Chen, Shiang Yu Chen, Kuo Ming Wu, J. R. Lee, Tsung Yi Huang, C. M. Liu, S. L. Hsu

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The hot-carrier-induced degradation in the high-voltage n-type lateral diffused metal-oxide-semiconductor (LDMOS) field-effect transistor is investigated. Interface state generation caused by hot-electron injection in the channel region is identified to be the main degradation mechanism. Since the gate current (Ig) consists mainly of the electron injection, I g correlates well with the hot-carrier lifetime of the device. The impact of varying device layout parameter on the performance and hot-carrier lifetime of the device are also evaluated. Such an analysis can achieve a better design of LDMOS transistors when considering both device performance and hot-carrier reliability.

原文English
頁(從 - 到)2641-2644
頁數4
期刊Japanese journal of applied physics
47
發行號4 PART 2
DOIs
出版狀態Published - 2008 4月 25

All Science Journal Classification (ASJC) codes

  • 一般工程
  • 一般物理與天文學

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