A new MISS switching device structure was designed and fabricated, which consists of Al/thin thermal oxide/p-n+-p-Si layers and is isolated by diffusing n-well to the buried n+ layer. Furthermore, an N+-shield layer which confines the carrier flow to the MIS interface and a p--gate which injects carriers in the n--p junction were successfully implemented. The device reveals that switching and holding voltages Vs and VH both decrease with increasing A0x, and with decreasing A1and d0x. The fringing effect is minimized due to the isolated structure.
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