An Isolated MISS Regenerative Switching Device

C. Y. Chang, F. C. Tzeng, C. T. Chen, S. J. Wang, Y. D. Wang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A new MISS switching device structure was designed and fabricated, which consists of Al/thin thermal oxide/p-n+-p-Si layers and is isolated by diffusing n-well to the buried n+ layer. Furthermore, an N+-shield layer which confines the carrier flow to the MIS interface and a p--gate which injects carriers in the n--p junction were successfully implemented. The device reveals that switching and holding voltages Vs and VH both decrease with increasing A0x, and with decreasing A1and d0x. The fringing effect is minimized due to the isolated structure.

原文English
頁(從 - 到)545-547
頁數3
期刊IEEE Electron Device Letters
6
發行號10
DOIs
出版狀態Published - 1985 十月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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