An ultra wideband quasi-circulatorwith distributed amplifiers using 90 nm CMOS technology

Shih Han Hung, Kai Wen Cheng, Yeong Her Wang

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

An ultra wideband (UWB) quasi-circulator implemented with distributed amplifiers using the 90 nm complementary metal-oxide-semiconductor (CMOS) technology is presented. The proposed quasi-circulator is composed of two distributed amplifiers and two Lange couplers to attain UWB performance at 14 to 67 GHz. Good insertion gain of 4.3 dB to -3.5 dB, low noise figure of 7.1 to 12.6 dB, and good isolation characteristic of |S31|better than 20 dB can be obtained. Using the distributed amplifier technique, the proposed quasi-circulator offers significant advantages of broad operation bandwidth, high isolation, low noise figure, and good insertion gain.

原文English
文章編號6636105
頁(從 - 到)656-658
頁數3
期刊IEEE Microwave and Wireless Components Letters
23
發行號12
DOIs
出版狀態Published - 2013 十二月 1

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 電氣與電子工程

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