TY - JOUR
T1 - An ultra wideband quasi-circulatorwith distributed amplifiers using 90 nm CMOS technology
AU - Hung, Shih Han
AU - Cheng, Kai Wen
AU - Wang, Yeong Her
PY - 2013/12
Y1 - 2013/12
N2 - An ultra wideband (UWB) quasi-circulator implemented with distributed amplifiers using the 90 nm complementary metal-oxide-semiconductor (CMOS) technology is presented. The proposed quasi-circulator is composed of two distributed amplifiers and two Lange couplers to attain UWB performance at 14 to 67 GHz. Good insertion gain of 4.3 dB to -3.5 dB, low noise figure of 7.1 to 12.6 dB, and good isolation characteristic of |S31|better than 20 dB can be obtained. Using the distributed amplifier technique, the proposed quasi-circulator offers significant advantages of broad operation bandwidth, high isolation, low noise figure, and good insertion gain.
AB - An ultra wideband (UWB) quasi-circulator implemented with distributed amplifiers using the 90 nm complementary metal-oxide-semiconductor (CMOS) technology is presented. The proposed quasi-circulator is composed of two distributed amplifiers and two Lange couplers to attain UWB performance at 14 to 67 GHz. Good insertion gain of 4.3 dB to -3.5 dB, low noise figure of 7.1 to 12.6 dB, and good isolation characteristic of |S31|better than 20 dB can be obtained. Using the distributed amplifier technique, the proposed quasi-circulator offers significant advantages of broad operation bandwidth, high isolation, low noise figure, and good insertion gain.
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U2 - 10.1109/LMWC.2013.2283864
DO - 10.1109/LMWC.2013.2283864
M3 - Article
AN - SCOPUS:84897659560
SN - 1531-1309
VL - 23
SP - 656
EP - 658
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 12
M1 - 6636105
ER -