An X-band high-power and high-PAE PHEMT MMIC power amplifier for pulse and CW operation

Chen Kuo Chu, Hou Kuei Huang, Hong Zhi Liu, Che Hung Lin, Ching Hsueh Chang, Chang Luen Wu, Chian Sern Chang, Yeong Her Wang

研究成果: Article同行評審

24 引文 斯高帕斯(Scopus)

摘要

An X-band high-power and high power added efficiency (PAE), two-stage AlGaAs/InGaAs/GaAs psuedomorphic high electronic mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) power amplifier is presented. The amplifier is designed to fully match a 50 Ω input and output impedance. Based on a 0.35 μm gate-length power PHEMT technology, the MMIC is fabricated on a 3 mil thick wafer. Under an 8 V DC bias condition, the characteristics of 17.5 dB small-signal gain, 10 W continuous wave mode saturation output power of 42% PAE, and 12.6 W pulse saturation output power of 52.6% PAE at 9.4 GHz can be achieved.

原文English
文章編號4639566
頁(從 - 到)707-709
頁數3
期刊IEEE Microwave and Wireless Components Letters
18
發行號10
DOIs
出版狀態Published - 2008 十月

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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