Analyses of delta-doped emitter bipolar transistor

K. F. Yarn, K. L. Lew, Yeong-Her Wang, Mau-phon Houng

研究成果: Article

摘要

In this article, the theoretical model of delta-doped emitter bipolar transistor that included the effect of bandgap shrinkage is presented. The recombination in emitter set-back layer is also considered. We also present the calculated results for the current gain as a function of barrier height, barrier width, and emitter set-back layer thickness. The experimental results of the device are also given.

原文English
頁(從 - 到)729-741
頁數13
期刊International Journal of Electronics
92
發行號12
DOIs
出版狀態Published - 2005 十二月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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