Analysis and numerical simulation of the dual-gate permeable base transistor

Shui-Jinn Wang, F. Y. Yeh, Y. C. Luo, S. L. Wu

研究成果: Conference contribution

摘要

Recent interest in novel transistor geometries to radically extending the high-frequency limit of three-terminal devices has stimulated the development of ,new technologies for fabricating submicrometer semiconductor structures. One such technology, the lateral growth of single-crystal semiconductor over metals and insulators, has been combined with submicrometer lithography in the fabrication of permeable base transistor (PBT) [1]-The distinguishing feature of PET is a thin tungsten grating which is embedded inside a single crystal semiconductor and is the gate (base) of the transistor. In this article the dud gate is used to reduce the idluence of drain voltage on the input current.

原文English
主出版物標題SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation
發行者Institute of Electrical and Electronics Engineers Inc.
頁面59-60
頁數2
ISBN(電子)0780312252, 9780780312258
DOIs
出版狀態Published - 1993 一月 1
事件1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993 - Taipei, Taiwan
持續時間: 1993 三月 61993 三月 7

出版系列

名字SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation

Conference

Conference1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993
國家Taiwan
城市Taipei
期間93-03-0693-03-07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Modelling and Simulation

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