TY - JOUR
T1 - Analysis of Back-Contact Interface Recombination in Thin-Film Solar Cells
AU - Paul, Sanjoy
AU - Grover, Sachit
AU - Repins, Ingrid L.
AU - Keyes, Brian M.
AU - Contreras, Miguel A.
AU - Ramanathan, Kannan
AU - Noufi, Rommel
AU - Zhao, Zhibo
AU - Liao, Feng
AU - Li, Jian V.
N1 - Publisher Copyright:
© 2011-2012 IEEE.
PY - 2018/5
Y1 - 2018/5
N2 - The open-circuit voltage (VOC) in a generic TCO/buffer/absorber/back-contact thin-film solar cell device is a key parameter in the recombination analysis. In particular, VOC is sensitively influenced by the interface recombination at the buffer/absorber front interface and at the absorber/back-contact interface. This paper reports the temperature, excitation light intensity, and wavelength-dependent open-circuit voltage analysis to separate and quantify recombination rates in solar cells at the front and back interfaces, in the depletion regions, and in the quasi-neutral region. The wavelength-dependent VOC analysis is exploited to extract the absorber/back-contact recombination coefficient. The experimentally observed results are verified using SCAPS-1D (one dimensional - a solar cell capacitance simulator) simulation.
AB - The open-circuit voltage (VOC) in a generic TCO/buffer/absorber/back-contact thin-film solar cell device is a key parameter in the recombination analysis. In particular, VOC is sensitively influenced by the interface recombination at the buffer/absorber front interface and at the absorber/back-contact interface. This paper reports the temperature, excitation light intensity, and wavelength-dependent open-circuit voltage analysis to separate and quantify recombination rates in solar cells at the front and back interfaces, in the depletion regions, and in the quasi-neutral region. The wavelength-dependent VOC analysis is exploited to extract the absorber/back-contact recombination coefficient. The experimentally observed results are verified using SCAPS-1D (one dimensional - a solar cell capacitance simulator) simulation.
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U2 - 10.1109/JPHOTOV.2018.2819664
DO - 10.1109/JPHOTOV.2018.2819664
M3 - Article
AN - SCOPUS:85046122222
SN - 2156-3381
VL - 8
SP - 871
EP - 878
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
IS - 3
ER -