Analysis of buried heterointerfacial hydrogen in highly lattice-mismatched epitaxy on silicon

T. Yamazaki, H. Asaoka, T. Taguchi, S. Yamamoto, D. Yamazaki, R. Maruyama, M. Takeda, S. Shamoto

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We realized the epitaxial growth of a Sr layer on Si(111) with an atomically abrupt heterointerface - in spite of its large lattice mismatch (12%) with Si - by introducing a monoatomic layer of H on Si. In order to identify the buried H, we carried out a combination analysis involving neutron reflectometry and resonant nuclear reaction of 1H( 15N,αγ) 12C analysis. We found different neutron reflectivity profiles resulting from a contrast variation between the H and D atoms at the buried heterointerface. Furthermore, the depth γ-ray intensity profiles revealed that the H at the heterointerface acts as an effective buffer layer that enables it to manage the highly mismatched epitaxy on Si.

原文English
頁(從 - 到)3300-3303
頁數4
期刊Thin Solid Films
520
發行號8
DOIs
出版狀態Published - 2012 二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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