Analysis of carrier mobility change in silicon inversion layer due to through-silicon via thermal stress

C. C. Hsieh, Tz-Cheng Chiu

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

The effect of stress concentration around Cu through-silicon via (TSV) on carrier mobility in typical metal oxide semiconductor field effect transistor (MOSFET) Si inversion layer is considered by using numerical finite element simulation in combination with piezoresistive equations. Carrier mobility changes along <100> or <110> channel directions are obtained for transistors on (001) Si die, and for devices fabricated with either strain-Si or unstrained-Si technology. The analysis shows that the TSV related thermal stress causes a higher mobility shift in p-MOSFET with <110> channels.

原文English
主出版物標題2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings
頁面351-354
頁數4
DOIs
出版狀態Published - 2012 十二月 1
事件2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Taipei, Taiwan
持續時間: 2012 十月 242012 十月 26

出版系列

名字Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
ISSN(列印)2150-5934
ISSN(電子)2150-5942

Other

Other2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012
國家Taiwan
城市Taipei
期間12-10-2412-10-26

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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