TY - JOUR
T1 - Analysis of dependence of resonant tun-neling on static positive parameters in a single-negative bilayer
AU - Lin, W. H.
AU - Wu, C. J.
AU - Yang, T. J.
AU - Chang, S. J.
PY - 2011
Y1 - 2011
N2 - It is known that electromagnetic resonant tunneling phenomenon can be found in the single-negative (SNG) bilayer, a two-layer coating made of the epsilon-negative (ENG) and the mu-negative (MNG) media. In this work, we report that this resonant tunneling is strongly dependent on the static positive parameters in SNG materials. The values of the static permeability in ENG layer and the static permittivity in MNG layer for obtaining the resonant tunneling are theoretically analyzed and discussed for two possible cases of equal-and unequal-thicknesses. Useful design guidelines in selecting positive parameters for the resonant tunneling are obtained. We also investigate the possible influence in the resonant tunneling due to the losses from the ENG and MNG materials. Additionally, we examine the polarization-dependent resonant tunneling, that is, the dependence of angle of incidence is examined.
AB - It is known that electromagnetic resonant tunneling phenomenon can be found in the single-negative (SNG) bilayer, a two-layer coating made of the epsilon-negative (ENG) and the mu-negative (MNG) media. In this work, we report that this resonant tunneling is strongly dependent on the static positive parameters in SNG materials. The values of the static permeability in ENG layer and the static permittivity in MNG layer for obtaining the resonant tunneling are theoretically analyzed and discussed for two possible cases of equal-and unequal-thicknesses. Useful design guidelines in selecting positive parameters for the resonant tunneling are obtained. We also investigate the possible influence in the resonant tunneling due to the losses from the ENG and MNG materials. Additionally, we examine the polarization-dependent resonant tunneling, that is, the dependence of angle of incidence is examined.
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U2 - 10.2528/PIER11040202
DO - 10.2528/PIER11040202
M3 - Article
AN - SCOPUS:79960687807
SN - 1070-4698
VL - 118
SP - 151
EP - 165
JO - Progress in Electromagnetics Research
JF - Progress in Electromagnetics Research
ER -