摘要
The device characteristics and hot-carrier-induced degradation of high-voltage n-type metal-oxide-semiconductor transistors with traditional and gradual junctions in the drift region are studied in this work. The gradual junction used in this study is realized by self-aligned N- implantation through dual thicknesses of screen oxide during N- drift implantation. Compared with traditional devices, devices with gradual junctions have improved off-state breakdown voltage (V BD) without sacrificing on-state driving current and hot-carrier-induced degradation. More improvement in V BD is observed if the dimensions of the device are larger. The mechanism responsible for V BD improvement in devices with gradual junctions is also investigated by using technology computer-aided-design simulations.
原文 | English |
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文章編號 | 08PD04 |
期刊 | Japanese journal of applied physics |
卷 | 55 |
發行號 | 8S2 |
DOIs | |
出版狀態 | Published - 2016 |
All Science Journal Classification (ASJC) codes
- 一般工程
- 一般物理與天文學