Analysis of high-voltage metal-oxide-semiconductor transistors with gradual junction in the drift region

Jone F. Chen, Teng Jen Ai, Yan Lin Tsai, Hao Tang Hsu, Chih Yuan Chen, Hann Ping Hwang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The device characteristics and hot-carrier-induced degradation of high-voltage n-type metal-oxide-semiconductor transistors with traditional and gradual junctions in the drift region are studied in this work. The gradual junction used in this study is realized by self-aligned N- implantation through dual thicknesses of screen oxide during N- drift implantation. Compared with traditional devices, devices with gradual junctions have improved off-state breakdown voltage (V BD) without sacrificing on-state driving current and hot-carrier-induced degradation. More improvement in V BD is observed if the dimensions of the device are larger. The mechanism responsible for V BD improvement in devices with gradual junctions is also investigated by using technology computer-aided-design simulations.

原文English
文章編號08PD04
期刊Japanese journal of applied physics
55
發行號8S2
DOIs
出版狀態Published - 2016

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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