Analysis of the hysteresis in the I-V characteristics of vertically integrated, multipeaked resonant-tunneling diodes

Tai Haur Kuo, Hung C. Lin, Robert C. Potter, Dave Shupe

研究成果: Article

10 引文 斯高帕斯(Scopus)

摘要

The hysteresis (extrinsic) and current-voltage (I-V) characteristics of the multiwell, vertically integrated, resonant-tunneling diode are analyzed. Our analysis shows that hysteresis in the vertically integrated diode I-V can result from interchanging the order in which the devices switch, depending if the bias is increasing or decreasing. Experimental results are presented that support this analysis.

原文English
頁(從 - 到)2496-2498
頁數3
期刊Journal of Applied Physics
68
發行號5
DOIs
出版狀態Published - 1990 十二月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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