Analytical modeling and numerical simulations of temperature field in TSV-based 3D ICs

Yuriy Shiyanovskii, Chris Papachristou, Cheng Wen Wu

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

Three dimensional (3D) integrated circuit (IC) technology is emerging as a potential alternative to address the physical limitations in miniaturization of the current 2D semiconductor devices. The 3D IC integration is based on the concept of through-silicon vias (TSV) and vertical stacking of multiple active layers. TSV-based 3D IC's offer significant advantages in performance due to reduction in interconnect lengths, and design flexibility in vertical floor planning. However, a critical challenge for the 3D IC integration is thermal management. In this paper, we present a new analytical 3D model and numerical simulations of the temperature field for the 3D chip using the formalism of inplane orthogonal functions. The model takes into account heat transfer through external surfaces of the chip, inhomogeneous electric heating within the layer (localized heating), inter layer heat transfer with possible inhomogeneous TSV placement and micro channel cooling. Our simulations implement the proposed model and demonstrate its viability and computational efficiency for temperature field optimization.

原文English
主出版物標題Proceedings of the 14th International Symposium on Quality Electronic Design, ISQED 2013
頁面24-29
頁數6
DOIs
出版狀態Published - 2013 七月 5
事件14th International Symposium on Quality Electronic Design, ISQED 2013 - Santa Clara, CA, United States
持續時間: 2013 三月 42013 三月 6

出版系列

名字Proceedings - International Symposium on Quality Electronic Design, ISQED
ISSN(列印)1948-3287
ISSN(電子)1948-3295

Other

Other14th International Symposium on Quality Electronic Design, ISQED 2013
國家United States
城市Santa Clara, CA
期間13-03-0413-03-06

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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