Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic Control in Short-Channel FinFETs

Jhang Yan Ciou, Sourav De, Chien Wei Wang, Wallace Lin, Yao Jen Lee, Darsen Lu

研究成果: Conference contribution

摘要

This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25\text{nm to 100nm using TCAD. The results show that negative capacitance significantly reduces subthreshold swing as well as drain induced barrier lowering effects. The improvement is found to be significantly more prominent for short channel devices than long ones, which demonstrates the tremendous advantage of negative capacitance gate stack for scaled MOSFETs. A compact analytical formulation is developed to quantify sub-threshold swing improvement for short channel devices.

原文English
主出版物標題2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728181769
DOIs
出版狀態Published - 2021 四月 8
事件5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, China
持續時間: 2021 四月 82021 四月 11

出版系列

名字2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

Conference

Conference5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
國家/地區China
城市Chengdu
期間21-04-0821-04-11

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 工業與製造工程
  • 電子、光磁材料

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