Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate

K. W. Lee; J. S. Huang; F. M. Lee; Y. S. Huang; Yeong-Her Wang; S. C. Su; B. H. Chao; C. C. Chen

doi:10.1109/EDSSC.2007.4450111

Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate

K. W. Lee, J. S. Huang, F. M. Lee, Y. S. Huang, Yeong-Her Wang, S. C. Su, B. H. Chao, C. C. Chen

研究成果: Conference contribution

1 引文斯高帕斯（Scopus）

摘要

The analytical model is developed to calculate the sheet carrier densities of InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with a thin InGaAs native oxide layer and conventional MHEMT structures. The electric field, potential, and sheet carrier density versus different position within the gate length are investigated for both structures.

原文	English
主出版物標題	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
頁面	259-262
頁數	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450111
出版狀態	Published - 2007
事件	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan 持續時間: 2007 12月 20 → 2007 12月 22

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
國家/地區	Taiwan
城市	Tainan
期間	07-12-20 → 07-12-22

All Science Journal Classification (ASJC) codes

電氣與電子工程
電子、光磁材料

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10.1109/EDSSC.2007.4450111

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Lee, K. W., Huang, J. S., Lee, F. M., Huang, Y. S., Wang, Y.-H., Su, S. C., Chao, B. H., & Chen, C. C. (2007). Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate. 於 IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (頁 259-262). 文章 4450111 https://doi.org/10.1109/EDSSC.2007.4450111

@inproceedings{e4cf04a1af334fd489ab9f11225a975f,

title = "Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate",

abstract = "The analytical model is developed to calculate the sheet carrier densities of InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with a thin InGaAs native oxide layer and conventional MHEMT structures. The electric field, potential, and sheet carrier density versus different position within the gate length are investigated for both structures.",

author = "Lee, {K. W.} and Huang, {J. S.} and Lee, {F. M.} and Huang, {Y. S.} and Yeong-Her Wang and Su, {S. C.} and Chao, {B. H.} and Chen, {C. C.}",

year = "2007",

doi = "10.1109/EDSSC.2007.4450111",

language = "English",

isbn = "1424406374",

pages = "259--262",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Lee, KW, Huang, JS, Lee, FM, Huang, YS, Wang, Y-H, Su, SC, Chao, BH & Chen, CC 2007, Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate. 於 IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450111, 頁 259-262, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450111

TY - GEN

T1 - Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate

AU - Lee, K. W.

AU - Huang, J. S.

AU - Lee, F. M.

AU - Huang, Y. S.

AU - Wang, Yeong-Her

AU - Su, S. C.

AU - Chao, B. H.

AU - Chen, C. C.

PY - 2007

Y1 - 2007

N2 - The analytical model is developed to calculate the sheet carrier densities of InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with a thin InGaAs native oxide layer and conventional MHEMT structures. The electric field, potential, and sheet carrier density versus different position within the gate length are investigated for both structures.

AB - The analytical model is developed to calculate the sheet carrier densities of InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with a thin InGaAs native oxide layer and conventional MHEMT structures. The electric field, potential, and sheet carrier density versus different position within the gate length are investigated for both structures.

UR - http://www.scopus.com/inward/record.url?scp=43049170086&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43049170086&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2007.4450111

DO - 10.1109/EDSSC.2007.4450111

M3 - Conference contribution

AN - SCOPUS:43049170086

SN - 1424406374

SN - 9781424406371

SP - 259

EP - 262

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

ER -

Analytical study of the DC characteristics on the InAlAs/InGaAs metamorphic HEMT with oxidized InGaAs gate

摘要

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