Analytical surface-potential calculation in UTBSOI MOSFETs with independent back-gate control

S. Khandelwal, Y. S. Chauhan, Darsen Lu, M. A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu

研究成果: Conference contribution

摘要

We present an analytical calculation for surface-potential in UTBSOI MOSFETs. The developed surface-potential calculation advances the previous work in terms of computational efficiency and accuracy. The surface-potential can be calculated with independent back-gate control which is an important requirement for UTBSOI devices. The accuracy of our surface-potential calculation is of the order of nano-volts for full range of bias voltage without use of any empirical or fitting parameter.

原文English
主出版物標題Nanotechnology 2012
主出版物子標題Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
頁面780-783
頁數4
出版狀態Published - 2012 八月 17
事件Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
持續時間: 2012 六月 182012 六月 21

出版系列

名字Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Other

OtherNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
國家United States
城市Santa Clara, CA
期間12-06-1812-06-21

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Surfaces, Coatings and Films

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