Analyzing BTI effects on retention registers

Yao Te Wang, Ing-Chao Lin

研究成果: Conference contribution

摘要

As Bias Temperature Instability (BTI) effects increase the threshold voltage of transistors and decrease transistors speed, it has become a major problem for circuit reliability.

原文English
主出版物標題Proceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012
頁面71-77
頁數7
DOIs
出版狀態Published - 2012 十一月 26
事件4th Asia Symposium on Quality Electronic Design, ASQED 2012 - Penang, Malaysia
持續時間: 2012 七月 102012 七月 11

出版系列

名字Proceedings of the 4th Asia Symposium on Quality Electronic Design, ASQED 2012

Other

Other4th Asia Symposium on Quality Electronic Design, ASQED 2012
國家Malaysia
城市Penang
期間12-07-1012-07-11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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