Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE

S. J. Cai, Y. S. Tang, R. Li, Y. Y. Wei, L. Wong, Y. L. Chen, K. L. Wang, Mary Chen, Y. F. Zhao, R. D. Schrimpf, J. C. Keay, K. F. Galloway

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87 引文 斯高帕斯(Scopus)

摘要

The influence of proton irradiation (1.8 MeV, 1×1014 cm-2) on the properties of an AlxGa1-xN/GaN high electron mobility transistor (HEMT) is studied from current-voltage (I-V) and Raman scattering measurements as a function of rapid thermal annealing (RTA) temperature after irradiation. The I-V curves show that the saturation current (Ids) and the transconductance (gm) of the HEMT were seriously reduced by the irradiation. However, the dc characteristics of the HEMT could be mostly recovered by RTA at over 800 °C.

原文English
頁(從 - 到)304-307
頁數4
期刊IEEE Transactions on Electron Devices
47
發行號2
DOIs
出版狀態Published - 2000

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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