Annealing condition, Tc, and oxidation enthalpy in HgBa2CuO4+δ

Y. Y. Xue, Q. Xiong, F. Chen, Y. Cao, L. M. Liu, A. J. Jacobson, C. W. Chu

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3 引文 斯高帕斯(Scopus)

摘要

To obtain a broad range of Tc for HgBa2CuO4+δ (Hg1201) by annealing, the oxidation thermodynamics and oxygen diffusion have been studied. During annealing, δ is controlled by the oxygen partial pressure P(O2) as well as the annealing temperature Ta with the oxidation enthalpy ΔH and the oxidation entropy ΔS as key parameters. Our data suggest that the ΔH of Hg1201 significantly depends on δ, which makes the ∂δ/ ∂P(O2) of Hg1201 smaller than that of YBa2Cu3O7-δ in a practical Ta range. Therefore, a wider P(O2) range are necessary. By choosing proper annealing parameters, Hg1201 samples with 0 K ≤ Tc ≤ 97 K on the underdoped side and 97 K ≥ Tc ≥ 20 K on the overdoped side were obtained.

原文English
頁(從 - 到)901-902
頁數2
期刊Physica C: Superconductivity and its applications
235-240
發行號PART 2
DOIs
出版狀態Published - 1994 12月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 能源工程與電力技術
  • 電氣與電子工程

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