Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films

C. Y. Kung; F. H. Wang; Cheng-Liang Huang; T. T. Lin; S. L. Young

Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films

C. Y. Kung, F. H. Wang, Cheng-Liang Huang, T. T. Lin, S. L. Young

電機工程學系

研究成果: Paper › 同行評審

摘要

The transparent conductive AZO (Al: 1 at.%) films were prepared on Corning fabricated Eagle 2000 glass substrate with strain point 666°C by a sol-gel method. The annealing temperature is performed between 400 to 800°C to study the annealing effect on the electrical and optical properties. The result shows that sample annealed at 700°C slightly higher than the strain point of the substrate has the lowest resistivity, which is more than ten times lower than that of the other samples. However, the worst transmittance of 86% in the visible region has been also been observed for the sample annealed at 700°C which is 2.5-3.6% less that of samples with different anneal temperatures.

原文	English
頁面	43-45
頁數	3
出版狀態	Published - 2014 1月 1
事件	2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China 持續時間: 2013 10月 26 → 2013 11月 1

Other

Other	2nd International Conference on Innovation, Communication and Engineering, ICICE 2013
國家/地區	China
城市	Qingdao
期間	13-10-26 → 13-11-01

All Science Journal Classification (ASJC) codes

技術與創新管理

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title = "Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films",

abstract = "The transparent conductive AZO (Al: 1 at.%) films were prepared on Corning fabricated Eagle 2000 glass substrate with strain point 666°C by a sol-gel method. The annealing temperature is performed between 400 to 800°C to study the annealing effect on the electrical and optical properties. The result shows that sample annealed at 700°C slightly higher than the strain point of the substrate has the lowest resistivity, which is more than ten times lower than that of the other samples. However, the worst transmittance of 86% in the visible region has been also been observed for the sample annealed at 700°C which is 2.5-3.6% less that of samples with different anneal temperatures.",

author = "Kung, {C. Y.} and Wang, {F. H.} and Cheng-Liang Huang and Lin, {T. T.} and Young, {S. L.}",

year = "2014",

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day = "1",

language = "English",

pages = "43--45",

note = "2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 ; Conference date: 26-10-2013 Through 01-11-2013",

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TY - CONF

T1 - Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films

AU - Kung, C. Y.

AU - Wang, F. H.

AU - Huang, Cheng-Liang

AU - Lin, T. T.

AU - Young, S. L.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The transparent conductive AZO (Al: 1 at.%) films were prepared on Corning fabricated Eagle 2000 glass substrate with strain point 666°C by a sol-gel method. The annealing temperature is performed between 400 to 800°C to study the annealing effect on the electrical and optical properties. The result shows that sample annealed at 700°C slightly higher than the strain point of the substrate has the lowest resistivity, which is more than ten times lower than that of the other samples. However, the worst transmittance of 86% in the visible region has been also been observed for the sample annealed at 700°C which is 2.5-3.6% less that of samples with different anneal temperatures.

AB - The transparent conductive AZO (Al: 1 at.%) films were prepared on Corning fabricated Eagle 2000 glass substrate with strain point 666°C by a sol-gel method. The annealing temperature is performed between 400 to 800°C to study the annealing effect on the electrical and optical properties. The result shows that sample annealed at 700°C slightly higher than the strain point of the substrate has the lowest resistivity, which is more than ten times lower than that of the other samples. However, the worst transmittance of 86% in the visible region has been also been observed for the sample annealed at 700°C which is 2.5-3.6% less that of samples with different anneal temperatures.

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M3 - Paper

AN - SCOPUS:84896668825

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T2 - 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013

Y2 - 26 October 2013 through 1 November 2013

ER -

Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films

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