Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films

C. Y. Kung, F. H. Wang, Cheng-Liang Huang, T. T. Lin, S. L. Young

研究成果: Paper

摘要

The transparent conductive AZO (Al: 1 at.%) films were prepared on Corning fabricated Eagle 2000 glass substrate with strain point 666°C by a sol-gel method. The annealing temperature is performed between 400 to 800°C to study the annealing effect on the electrical and optical properties. The result shows that sample annealed at 700°C slightly higher than the strain point of the substrate has the lowest resistivity, which is more than ten times lower than that of the other samples. However, the worst transmittance of 86% in the visible region has been also been observed for the sample annealed at 700°C which is 2.5-3.6% less that of samples with different anneal temperatures.

原文English
頁面43-45
頁數3
出版狀態Published - 2014 一月 1
事件2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China
持續時間: 2013 十月 262013 十一月 1

Other

Other2nd International Conference on Innovation, Communication and Engineering, ICICE 2013
國家China
城市Qingdao
期間13-10-2613-11-01

All Science Journal Classification (ASJC) codes

  • Management of Technology and Innovation

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  • 引用此

    Kung, C. Y., Wang, F. H., Huang, C-L., Lin, T. T., & Young, S. L. (2014). Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films. 43-45. 論文發表於 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.