Anomalous hot-carrier-induced increase in saturation-region drain current in n-type lateral diffused metal-oxide-semiconductor transistors

Shiang Yu Chen, Jone F. Chen, J. R. Lee, K. M.Kuo Ming Wu, C. M. Liu, S. L. Hsu

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

Anomalous increase in saturation-region drain current Id sat) but serious on-resistance degradation (decrease in linear-region drain current) is observed in n-type high-voltage lateral diffused MOS transistors stressed under medium gate voltage Vg . However, Id(sat) is degraded for the devices stressed under low and high Vg. Experimental data reveal that two competing mechanisms are responsible for the shift of Id (sat). One is the interface state Nit formation in the N- drift region. The other is the Nit formation in the channel region. The former mechanism leads to the anomalous increase in Id(sat), whereas the latter mechanism causes the Id(sat) to decrease. Experimental data and technology computer-aided-design simulations confirm that the impact ionization rate of the device is enhanced if significant Nit formation in the N- drift region is present. According to the results presented in this paper, significant Nit formation in the N- drift region is identified to be the main mechanism responsible for the anomalous increase in Id(sat).

原文English
頁(從 - 到)1137-1142
頁數6
期刊IEEE Transactions on Electron Devices
55
發行號5
DOIs
出版狀態Published - 2008 5月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

指紋

深入研究「Anomalous hot-carrier-induced increase in saturation-region drain current in n-type lateral diffused metal-oxide-semiconductor transistors」主題。共同形成了獨特的指紋。

引用此