Anomalous hot-carrier-induced increase in saturation-region drain current in n-type lateral diffused metal-oxide-semiconductor transistors

Shiang Yu Chen, Jone F. Chen, J. R. Lee, K. M.Kuo Ming Wu, C. M. Liu, S. L. Hsu

研究成果: Article › 同行評審

14 引文 斯高帕斯（Scopus）

指紋

深入研究「Anomalous hot-carrier-induced increase in saturation-region drain current in n-type lateral diffused metal-oxide-semiconductor transistors」主題。共同形成了獨特的指紋。

Engineering & Materials Science

Chemical Compounds