Anomalous negative-differential-resistance (NDR) characteristics of step-doped-channel transistor (SDCT)

Lih Wen Laih; Cheng Zu Wu; Shiou Ying Cheng; Jung Hui Tsai; Wen Chau Liu

doi:10.1049/el:19961291

Anomalous negative-differential-resistance (NDR) characteristics of step-doped-channel transistor (SDCT)

Lih Wen Laih, Cheng Zu Wu, Shiou Ying Cheng, Jung Hui Tsai, Wen Chau Liu

微電子工程研究所

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

An A1_0.3 Ga_0.7As/In_0.15Ga_0.85As/GaAs step-doped-channel transistor (SDCT) with anomalous three-terminal-controlled N-shaped negative-differential-resistance (NDR) phenomena has been fabricated and studied. The maximum drain current and peak-to-valley current ratio (PVCR) of 59 and 6.6mA are obtained, respectively. The high drain current and PVCR can increase the range of potential applications in large signal and logic circuits. The authors believe that the NDR phenomena are attributed to real-space-transfer (RST) and the deep-level electron trapping effect.

原文	English
頁（從 - 到）	2014-2015
頁數	2
期刊	Electronics Letters
卷	32
發行號	21
DOIs	https://doi.org/10.1049/el:19961291
出版狀態	Published - 1996 10月 10

All Science Journal Classification (ASJC) codes

電氣與電子工程

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10.1049/el:19961291

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abstract = "An A10.3 Ga0.7As/In0.15Ga0.85As/GaAs step-doped-channel transistor (SDCT) with anomalous three-terminal-controlled N-shaped negative-differential-resistance (NDR) phenomena has been fabricated and studied. The maximum drain current and peak-to-valley current ratio (PVCR) of 59 and 6.6mA are obtained, respectively. The high drain current and PVCR can increase the range of potential applications in large signal and logic circuits. The authors believe that the NDR phenomena are attributed to real-space-transfer (RST) and the deep-level electron trapping effect.",

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T1 - Anomalous negative-differential-resistance (NDR) characteristics of step-doped-channel transistor (SDCT)

AU - Laih, Lih Wen

AU - Wu, Cheng Zu

AU - Cheng, Shiou Ying

AU - Tsai, Jung Hui

AU - Liu, Wen Chau

PY - 1996/10/10

Y1 - 1996/10/10

N2 - An A10.3 Ga0.7As/In0.15Ga0.85As/GaAs step-doped-channel transistor (SDCT) with anomalous three-terminal-controlled N-shaped negative-differential-resistance (NDR) phenomena has been fabricated and studied. The maximum drain current and peak-to-valley current ratio (PVCR) of 59 and 6.6mA are obtained, respectively. The high drain current and PVCR can increase the range of potential applications in large signal and logic circuits. The authors believe that the NDR phenomena are attributed to real-space-transfer (RST) and the deep-level electron trapping effect.

AB - An A10.3 Ga0.7As/In0.15Ga0.85As/GaAs step-doped-channel transistor (SDCT) with anomalous three-terminal-controlled N-shaped negative-differential-resistance (NDR) phenomena has been fabricated and studied. The maximum drain current and peak-to-valley current ratio (PVCR) of 59 and 6.6mA are obtained, respectively. The high drain current and PVCR can increase the range of potential applications in large signal and logic circuits. The authors believe that the NDR phenomena are attributed to real-space-transfer (RST) and the deep-level electron trapping effect.

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JO - Electronics Letters

JF - Electronics Letters

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ER -

Anomalous negative-differential-resistance (NDR) characteristics of step-doped-channel transistor (SDCT)

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