Application of an emitter edge-thinning technique to GaAs/AlGaAs double heterostructure-emitter bipolar transistor

Wen Chau Liu, Der Feng Guo, Wen Shiung Lour

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A GaAs/AlGaAs double heterostructure-emitter bipolar transistor (DHEBT), prepared by molecular beam epitaxy, has been fabricated with improved performance. The employment of emitter edge-thinning technique has caused a significant suppression of the surface leakage current. A common-emitter current gain of up to 140 with a negligible collector offset voltage (∼40 mV) was obtained. The undesired knee-shaped characteristics and the reachthrough effect, always observed on the conventional double heterojunction bipolar transistor (DHBT), were eliminated. An interestingly bi-directional and three-terminal controlled switching phenomena may also be exhibited by this device. This gives a substantial flexibility in the device and circuit applications. The electrical performance is believed to be further improved with an adequate design to minimize the area difference between emitter-base (EB) and the base-collector (BC) junction.

原文English
頁(從 - 到)1441-1443
頁數3
期刊Applied Physics Letters
61
發行號12
DOIs
出版狀態Published - 1992

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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