Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage

Jung Hui Tsai, Shao Yen Chiu, Wen Shiung Lour, Der Feng Guo, Wen-Chau Liu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this paper, extremely high potential barrier height and gate turn-on voltage in an n+/p+/n+/p+/n GaAs field-effect transistor employing double camel-like gate structures are demonstrated. The gate potential barrier height of the double camel-like gate is substantially enhanced by the addition of another n+/p + layer in the gate region, as compared with the conventional n +/p+/n single camel-like gate structure. The influence of gate structure layers on the depletion depth, potential barrier height, transconductance and gate voltage swing are addressed. Experimental results show that a relatively high gate turn-on voltage up to +4.9 V is realized because two reverse-biased junctions of the double camel-like gate structures absorb part of the positive gate voltage. In addition, an extremely broad gate voltage swing greater than 4.6 V with the transconductance above 100 mS mm -1 is observed. These results indicate that the studied device is suitable for linear and signal amplifiers and inverter circuit applications.

原文English
文章編號026
頁(從 - 到)1132-1138
頁數7
期刊Semiconductor Science and Technology
21
發行號8
DOIs
出版狀態Published - 2006 八月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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