Applications of admittance spectroscopy in photovoltaic devices beyond majority-carrier trapping defects

Jian V. Li, Richard S. Crandall, Ingrid L. Repins, Alexandre M. Nardes, Dean H. Levi

研究成果: Conference contribution

9 引文 斯高帕斯(Scopus)

摘要

Admittance spectroscopy is commonly used to characterize majority-carrier trapping defects. In today's practical photovoltaic devices, however, a number of other physical mechanisms may contribute to the admittance measurement and interfere with the data interpretation. Such challenges arise due to the violation of basic assumptions of conventional admittance spectroscopy such as single-junction, ohmic contact, highly conductive absorbers, and measurement in reverse bias. We exploit such violations to devise admittance spectroscopy-based methods for studying the respective origins of "interference": majority-carrier mobility, non-ohmic contact potential barrier, minority-carrier inversion at heterointerface, and minority-carrier lifetime in a device environment. These methods are applied to a variety of photovoltaic technologies: CdTe, Cu(In, Ga)Se 2, Si HIT cells, and organic photovoltaic materials.

原文English
主出版物標題Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
頁面75-78
頁數4
DOIs
出版狀態Published - 2011
事件37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
持續時間: 2011 六月 192011 六月 24

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
國家/地區United States
城市Seattle, WA
期間11-06-1911-06-24

All Science Journal Classification (ASJC) codes

  • 控制與系統工程
  • 工業與製造工程
  • 電氣與電子工程

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