TY - GEN
T1 - Applications of GaAs grade-period doping superlattice for negative-differential-resistance device
AU - Liu, W. C.
AU - Sun, C. Y.
AU - Lour, W. S.
AU - Guo, D. F.
AU - Lee, Y. S.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1991
Y1 - 1991
N2 - The characteristics of a GaAs graded-period δ-doped superlattice grown by molecular beam epitaxy were studied. It is shown that a novel S-shaped negative differential conductivity (NDC) occurred both at 300 K and 77 K. Besides, a two-state avalanche multiplication process, i.e., a middle quasi-stable region is seen at 77 K. Finally, there is an interesting hysteresis phenomenon due to the trapped holes created by the avalanche multiplications. The significant control voltage ratio, Vs/VH, of the studied structure introduces a good potential for application on the switching field.
AB - The characteristics of a GaAs graded-period δ-doped superlattice grown by molecular beam epitaxy were studied. It is shown that a novel S-shaped negative differential conductivity (NDC) occurred both at 300 K and 77 K. Besides, a two-state avalanche multiplication process, i.e., a middle quasi-stable region is seen at 77 K. Finally, there is an interesting hysteresis phenomenon due to the trapped holes created by the avalanche multiplications. The significant control voltage ratio, Vs/VH, of the studied structure introduces a good potential for application on the switching field.
UR - http://www.scopus.com/inward/record.url?scp=0026368332&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026368332&partnerID=8YFLogxK
U2 - 10.1117/12.47295
DO - 10.1117/12.47295
M3 - Conference contribution
AN - SCOPUS:0026368332
SN - 0819406465
SN - 9780819406460
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 640
EP - 644
BT - Proceedings of SPIE - The International Society for Optical Engineering
PB - Publ by Int Soc for Optical Engineering
T2 - International Conference on Thin Film Physics and Applications - '91 TFPA
Y2 - 15 April 1991 through 17 April 1991
ER -