Applications of transparent Al-doped ZnO contact on GaN-based power LED

C. J. Tun, J. K. Sheu, B. J. Pong, M. L. Lee, M. Y. Lee, C. K. Hsieh, C. C. Hu, G. C. Chi

研究成果: Conference contribution

4 引文 斯高帕斯(Scopus)

摘要

In this study, ZnO:Al(AZO) Ni/AZO and NiOx/AZO films were deposited on p-type GaN films followed by thermal annealing to form Ohmic contacts. After thermal annealing, the resistivities reduced from 5×10-3 to 4.4×10-4Ω-cm, 2.6×10-3Ω-cm, and 1.1×10-3Ω-cm for AZO, Ni/AZO, and NiOx/AZO films, respectively. The Ohmic characteristic could be highly improved after inserting Ni and NiOx between AZO and p-GaN. Both the Ni/AZO and NiOx/AZO contacts exhibit Ohmic characteristic after annealed at 800°C in N2 ambient. The light transmittance of Ni/AZO and NiOx/AZO films were higher than 80% in the range of 380-700nm after the 800°C -annealing treatment. In addition, we fabricated InGaN/GaN MQW LEDs with a dimension of 1×1mm 2 using the transparent Ni/AZO and NiO2/AZO Ohmic contact as a current spreading layer for p-GaN in order to increase the light extrication efficiency. For the LED with Ni/AZO contact, the light output approach to saturation when the injection current was about 400mA. But the light output still doesn't approach to saturation when the injection current was 500mA for the LED with NiOx/AZO contact. This may be due to that the resistivity of Ni/AZO was higher than that of NiOx/A2O and exhibit more heavy current clouding effect. The increasing of resistivity may be due to the interdiffusion of Ni into AZO. Comparing to GaN LED with Ni/Au ohmic contact, the light output intensity of LEDs with Ni/AZO and NiOx/AZO contacts was increased by 41% and 60% at 350mA, respectively.

原文English
主出版物標題Gallium Nitride Materials and Devices
DOIs
出版狀態Published - 2006
事件Gallium Nitride Materials and Devices - San Jose, CA, United States
持續時間: 2006 一月 232006 一月 25

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
6121
ISSN(列印)0277-786X

Other

OtherGallium Nitride Materials and Devices
國家/地區United States
城市San Jose, CA
期間06-01-2306-01-25

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

指紋

深入研究「Applications of transparent Al-doped ZnO contact on GaN-based power LED」主題。共同形成了獨特的指紋。

引用此