Approaching a uniform bump height of the electroplated solder bumps on a silicon wafer

Kwang Lung Lin, Shiuh Yuan Chang

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

The investigation of the manipulation of the physical structure of an electrolytic cell to achieve uniform solder bumps on a silicon wafer is discussed. The variables investigated include: the applied current density, the distance and the area ratio of the electrode, and the width ratio between the cathode and the bath. The width ratio of one between the cathode and the bath was found to lead to a uniform bump height throughout the wafer. The reflow of the as-plated solder bumps raised bump height and produced uniform ball-shaped bumps. The deviations of the bump height on a wafer are within 5% after reflow of the uniform as-plated bumps.

原文English
頁(從 - 到)747-751
頁數5
期刊IEEE Transactions on Components Packaging and Manufacturing Technology Part B
19
發行號4
DOIs
出版狀態Published - 1996 十一月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

指紋

深入研究「Approaching a uniform bump height of the electroplated solder bumps on a silicon wafer」主題。共同形成了獨特的指紋。

引用此