Array of GaN-based transverse-junction blue light emitting diodes with regrown n-type regimes

Shi Hao Guol, H. W. Huang, C. S. Lin, Jinn-Kong Sheu, C. J. Tin, C. H. Kuo, Jin Wei Shi

研究成果: Conference article

摘要

In this research, we demonstrate array of transverse-junction (TJ) blue light-emitting-diodes (LEDs), which are specified as a horizontal carrier flow instead of side-by-side injection, with a consequence of In x Ga 1-x N/GaN multiple-quantum-wells (MQWs) as the active region. The demonstrated devices were carried out by the re-growth of n-type GaN on the sidewall of p-type GaN. Regarding the transverse carrier flow of injected carriers, these TJ-LEDs, as compared to the control related to traditional vertical junction structure, can effectively spread injected currents more uniformly, minimize the problem of nonuniform carrier-distribution and current crowding effect, and achieve 35% improvement of power performance.

原文English
文章編號721629
期刊Proceedings of SPIE - The International Society for Optical Engineering
7216
DOIs
出版狀態Published - 2009 五月 5
事件Gallium Nitride Materials and Devices IV - San Jose, CA, United States
持續時間: 2009 一月 262009 一月 29

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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