Assessment of structure variation in silicon nanowire FETs and impact on SRAM

Yi Bo Liao, Meng Hsueh Chiang, Keunwoo Kim, Wei Chou Hsu

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Impact of device structure variability of silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read/write noise margin are included in our study.

原文English
頁(從 - 到)300-304
頁數5
期刊Microelectronics Journal
43
發行號5
DOIs
出版狀態Published - 2012 五月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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