Asymmetric resistive switching characteristics of In₂O ₃:SiO₂ cosputtered thin film memories

The authors report the fabrication and characterization of resistance switching for a resistance random access memory with a Ti/In₂O ₃:SiO₂/Pt structure. It was found that the device exhibited bipolar resistance switching behavior over one hundred switching cycles and showed stable retention characteristics for over 10⁴ s under 100 mV stress condition. The asymmetric phenomenon of the carrier conduction mechanism at high resistance state was also explored by fitting the current-voltage (I-V) curves and explained by the schematic energy band diagram. It was also found that the switching behavior is due to the migration of oxygen ions and the formation of SiO₂ with higher quality at the interface of top electrode and insulator.