Atomic Imaging of Interface Defects in an Insulating Film on Diamond

Mami N. Fujii, Masaki Tanaka, Takumi Tsuno, Yusuke Hashimoto, Hiroto Tomita, Soichiro Takeuchi, Shunjo Koga, Zexu Sun, John Isaac Enriquez, Yoshitada Morikawa, Jun Mizuno, Mutsunori Uenuma, Yukiharu Uraoka, Tomohiro Matsushita

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The insulator/semiconductor interface structure is the key to electric device performance, and much interest has been focused on understanding the origin of interfacial defects. However, with conventional techniques, it is difficult to analyze the interfacial atomic structure buried in the insulating film. Here, we reveal the atomic structure at the interface between an amorphous aluminum oxide and diamond using a developed electron energy analyzer for photoelectron holography. We find that the three-dimensional atomic structure of a C-O-Al-O-C bridge between two dimer rows of the hydrogen-terminated diamond surface. Our results demonstrate that photoelectron holography can be used to reveal the three-dimensional atomic structure of the interface between a crystal and an amorphous film. We also find that the photoelectron intensity originating from the C-O bonds is strongly related to the interfacial defect density. We anticipate significant progress in the study of amorphous/crystalline interfaces based on their three-dimensional atomic structures analysis.

原文English
頁(從 - 到)1189-1194
頁數6
期刊Nano letters
23
發行號4
DOIs
出版狀態Published - 2023 2月 22

All Science Journal Classification (ASJC) codes

  • 生物工程
  • 一般化學
  • 一般材料科學
  • 凝聚態物理學
  • 機械工業

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