Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells

Yun Seog Lee, Danny Chua, Riley E. Brandt, Sin Cheng Siah, Jian V. Li, Jonathan P. Mailoa, Sang Woon Lee, Roy G. Gordon, Tonio Buonassisi

研究成果: Article同行評審

195 引文 斯高帕斯(Scopus)

摘要

The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

原文English
頁(從 - 到)4704-4710
頁數7
期刊Advanced Materials
26
發行號27
DOIs
出版狀態Published - 2014 七月 16

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 材料力學
  • 機械工業

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