摘要
The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.
原文 | English |
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頁(從 - 到) | 4704-4710 |
頁數 | 7 |
期刊 | Advanced Materials |
卷 | 26 |
發行號 | 27 |
DOIs | |
出版狀態 | Published - 2014 7月 16 |
All Science Journal Classification (ASJC) codes
- 一般材料科學
- 材料力學
- 機械工業