Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells

Yun Seog Lee; Danny Chua; Riley E. Brandt; Sin Cheng Siah; Jian V. Li; Jonathan P. Mailoa; Sang Woon Lee; Roy G. Gordon; Tonio Buonassisi

doi:10.1002/adma.201401054

Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells

Yun Seog Lee, Danny Chua, Riley E. Brandt, Sin Cheng Siah, Jian V. Li, Jonathan P. Mailoa, Sang Woon Lee, Roy G. Gordon, Tonio Buonassisi

航空太空工程學系

研究成果: Article › 同行評審

255 引文斯高帕斯（Scopus）

摘要

The power conversion efficiency of solar cells based on copper (I) oxide (Cu₂O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga₂O₃) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

原文	English
頁（從 - 到）	4704-4710
頁數	7
期刊	Advanced Materials
卷	26
發行號	27
DOIs	https://doi.org/10.1002/adma.201401054
出版狀態	Published - 2014 7月 16

All Science Journal Classification (ASJC) codes

一般材料科學
材料力學
機械工業

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10.1002/adma.201401054

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abstract = "The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97\%, showing potential of over 7\% efficiency.",

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AU - Lee, Yun Seog

AU - Chua, Danny

AU - Brandt, Riley E.

AU - Siah, Sin Cheng

AU - Li, Jian V.

AU - Mailoa, Jonathan P.

AU - Lee, Sang Woon

AU - Gordon, Roy G.

AU - Buonassisi, Tonio

PY - 2014/7/16

Y1 - 2014/7/16

N2 - The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

AB - The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

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JO - Advanced Materials

JF - Advanced Materials

IS - 27

ER -

Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells

摘要

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