Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells

Yun Seog Lee; Danny Chua; Riley E. Brandt; Sin Cheng Siah; Jian V. Li; Jonathan P. Mailoa; Sang Woon Lee; Roy G. Gordon; Tonio Buonassisi

doi:10.1002/adma.201401054

Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells

Yun Seog Lee
, Danny Chua
, Riley E. Brandt
, Sin Cheng Siah
, Jian V. Li
, Jonathan P. Mailoa
, Sang Woon Lee
, Roy G. Gordon
, Tonio Buonassisi

航空太空工程學系

研究成果: Article › 同行評審

256 引文斯高帕斯（Scopus）

摘要

The power conversion efficiency of solar cells based on copper (I) oxide (Cu₂O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga₂O₃) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

原文	English
頁（從 - 到）	4704-4710
頁數	7
期刊	Advanced Materials
卷	26
發行號	27
DOIs	https://doi.org/10.1002/adma.201401054
出版狀態	Published - 2014 7月 16

All Science Journal Classification (ASJC) codes

一般材料科學
材料力學
機械工業

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10.1002/adma.201401054

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title = "Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells",

abstract = "The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97\%, showing potential of over 7\% efficiency.",

author = "Lee, \{Yun Seog\} and Danny Chua and Brandt, \{Riley E.\} and Siah, \{Sin Cheng\} and Li, \{Jian V.\} and Mailoa, \{Jonathan P.\} and Lee, \{Sang Woon\} and Gordon, \{Roy G.\} and Tonio Buonassisi",

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doi = "10.1002/adma.201401054",

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AU - Lee, Yun Seog

AU - Chua, Danny

AU - Brandt, Riley E.

AU - Siah, Sin Cheng

AU - Li, Jian V.

AU - Mailoa, Jonathan P.

AU - Lee, Sang Woon

AU - Gordon, Roy G.

AU - Buonassisi, Tonio

PY - 2014/7/16

Y1 - 2014/7/16

N2 - The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

AB - The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

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UR - https://www.scopus.com/pages/publications/84904437442#tab=citedBy

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DO - 10.1002/adma.201401054

M3 - Article

AN - SCOPUS:84904437442

SN - 0935-9648

VL - 26

SP - 4704

EP - 4710

JO - Advanced Materials

JF - Advanced Materials

IS - 27

ER -

Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells

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