Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells

Yun Seog Lee, Danny Chua, Riley E. Brandt, Sin Cheng Siah, Jian V. Li, Jonathan P. Mailoa, Sang Woon Lee, Roy G. Gordon, Tonio Buonassisi

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247 引文 斯高帕斯（Scopus）

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Engineering & Materials Science

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